As a non-volatile storage solution,MRAM(Magnetic Random Access Memory)is gradually changing the storage architecture in key mission areas with its unique advantages.Everspin MRAM represented by Yingshang Microelectronics Institute,with its excellent technical characteristics,provides an ideal choice for many demanding applications.
MRAM(Magnetic Random Access Memory)uses magnetoresistive effect to store data,which has both the high-speed reading and writing performance of SRAM and the nonvolatile characteristics of Flash.Compared with traditional memory,it can permanently store data without power,and has an almost infinite reading and writing life,which effectively solves the problems of slow writing speed and limited durability of flash memory and the need for backup batteries for SRAM.
Take MR256D08B,a typical model of Everspin,as an example.This 256Kb×8 device supports a wide voltage range,adopts a small BGA package,and can replace flash memory,SRAM,EEPROM and other types of memories with a single chip,thus reducing the design complexity and material cost.MRAM magnetic random access memory supports I/O voltage of+1.65 to+3.6 volts.MR256D08B provides SRAM-compatible 45ns read/write timing,which has unlimited durability.The data in MRAM magnetic random access memory can still be safely stored for more than 20 years after power failure,and the built-in low-voltage suppression circuit can automatically write-protect when power failure occurs unexpectedly to prevent data damage.

MRAM magnetic random access memory MR256D08B is an ideal storage solution for applications that must meet the following requirements.Permanent storage and quick retrieval of key data and programs.The MR256D08B is packaged in a 8 mm x 8 mm,48-lead ball grid array(BGA)package with a 0.75 mm ball center.MR256D08B provides highly reliable data storage in a wide temperature range.Everspin MRAM provides an operating temperature of 0 to+70 C.
Everspin's parallel interface MRAM(such as 8-bit/16-bit model)provides access time of 35/45ns,which is completely compatible with SRAM timing and can realize fast data access.Its infinite reading and writing durability far exceeds that of flash memory and EEPROM,and it is suitable for frequent writing scenes.Everspin MRAM has a wide working temperature range and strong anti-interference ability,which conforms to RoHS standards.It has been verified by mature applications in aerospace,automotive,energy and other fields for more than 15 years,and its technical reliability has been recognized.
As an authorized partner of Everspin,RAMSUN not only provides a full range of MRAM products,but also provides adaptive technical support and solutions for applications such as real-time sensor processing,data recording,avionics and space systems.With the high performance and reliability of Everspin MRAM,enterprises can effectively improve the response speed of the system,prolong the service life of the equipment and reduce the maintenance cost.
Keywords: MRAM,Everspin
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